MOS

MOS 基本解释

abbr.  保养与作业支援(Maintenance and Operations Support); 主要作业系统；主要运行系统(Major Operating System); 管理作业系统(Management Operating System)

计算机

MOS 词组短语

• complementary MOS integrated circuit
• complementary MOS logic circuit
• diffusion self-alignment MOS integrated circuit
• dual-diffused MOS integrated circuit
• MOS array
• MOS logic gate
• MOS memory
• MOS shift register
• MOS static memory
• MOS storage cell

MOS 双语例句

1. 1、 Considering the need for modulation speed and power consumption, a kind of silicon MZM based on MOS capacitor electrodes is studied by a simulation method combining electric and optic analytic model.
   采用有限元方法，通过构建光和电结合模拟方法，对一种双硅层的MOS电容电极MZM的静态和动态性能进行了理论研究。
2. 2、 A modeling methodology for MOS varactor was presented for applications at millimeter-wave frequencies.
   提出了应用于毫米波段的MOS变容管的建模方法。
3. 3、 Preparation and Friction Properties of MOS_2/ WS_2 Composite Films Deposited by Magnetron Sputtering
   磁控溅射MoS2/WS2复合薄膜的制备及其摩擦学性能研究
4. 4、 The bipolar transistors or the resistors in the traditional current reference were replaced by MOS transistors working in the subthreshold region to achieve an all CMOS current reference.
   利用工作在亚阈值区的MOS管代替传统电流基准中的三极管或电阻器件，实现了一款全CMOS器件的电流基准。
5. 5、 Fabrication and charging characteristics of metal nanocrystals in MOS capacitor structure
   金属纳米晶的制备及其在MOS电容结构中的存储特性
6. 6、 A design method for binary neuron MOS circuits employing a summation signal with multiple values is presented.
   提出一种通过引入多值求和信号指导设计二值神经元MOS电路的方法。
7. 7、 There are obvious shortages while this model applied for small dimension MOS devices.
   指出该模型在模拟小尺寸器件时的不足之处。
8. 8、 First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices.
   首先，增加了处理速度和功能密度的需求，推动IC制造者进一步缩减MOS装置的最小尺寸。
9. 9、 Effects of Annealing Ambiences on Electrical Properties for Ge MOS Capacitor
   退火气氛对GeMOS电容电特性的影响
10. 10、 Impact of Double-Hump Substrate Current on the Degradation of High Voltage MOS Transistor
    双极值衬底电流对高压MOS器件退化的影响
11. 11、 V-groove MOS field effect transistor
    V形槽MOS场效晶体管
12. 12、 Effects of Surface Passivation on Reliability of Ge MOS Capacitors
    表面钝化对GeMOS电容可靠性的影响
13. 13、 The low-frequency power amplifier based on MOS tube
    基于MOS管低频功率放大器的设计
14. 14、 Accordingly, such a semiconductor device can be fabricated easily in which a MOS type element and a bipolar element are formed on the same chip in a mixed manner.
    从而，能够容易制造出在同一个芯片上混装了MOS型元件和双极元件的半导体装置。
15. 15、 Design of multi-valued double-edge-triggered D flip-flop based on clock-controlled neuron MOS transistor
    基于钟控神经MOS管的多值双边沿D触发器设计时标触发器定时触发器
16. 16、 A study was carried out on three-level circuit, MOS in parallel etc.
    对三电平电路、MOS管并联等进行了研究。
17. 17、 Working Process Analysis of the SCR-Power MOS FET Chopper
    晶闸管&功率场效应管斩波器工作过程分析
18. 18、 Several emphases about LC VCO design, including high Q on-chip inductor design, MOS-varactor design and tail current choice, are presented.
    根据前面的分析，详细介绍了LCVCO电路的设计方法：包括高Q值片上电感的设计、变容MOS管的设计以及尾电流的选取。
19. 19、 Study of Structure and Performance of Unbalanced Magnetron Sputtering MOS_2-Ti Coating Affected by Deposition Pressure
    沉积压力对非平衡磁控溅射沉积MoS2-Ti复合薄膜的结构与性能影响研究
20. 20、 A rectangular wave generating circuit has been designed with MOSFETs, half bridge driver chip LM27222 and gate drive transformer.
    利用MOS管、半桥驱动芯片LM27222、栅极驱动变压器等器件，设计了变极性矩形波发生电路。
21. 21、 Researches on Nonuniformity Correction Technologies for Resistor Array
    MOS电阻阵列非均匀性校正技术研究
22. 22、 Self-heating effect and channel length modulation exist in high voltage MOS devices, due to their special and complex structure.
    高压MOS器件具有复杂和特殊的结构，存在自热效应与沟道长度调制效应。
23. 23、 Electric double-track railway system dual diffused MOS integrated circuit
    电气化双轨铁路系统双扩散型MOS集成电路
24. 24、 C-HMOS technology borrows many of the design and performance characteristics of high-performance MOS ( HMOS).
    HMOS技术援引了搞性能MOS（HMOS）中的许多设计和性能特征。
25. 25、 The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
    以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；
26. 26、 Design and Performance Study for AlN as the Gate Dielectric Material Applied to Nano-scale MOS Devices
    应用于纳米级MOS器件的AlN栅介质材料设计及性能研究
27. 27、 Single event upset rate analysis of SRAM/ MOS equipments in satellite optical communication system
    卫星光通信系统中SRAM/MOS器件的单粒子翻转率分析
28. 28、 Families and products of MOS memory for semiconductor integrator circuits
    GB/T3437-1982半导体集成电路MOS存储器系列和品种
29. 29、 Preparation of MOS_2 and Its Intercalation Compound and Their Performance Study
    MoS2及其夹层化合物的制备与性能研究
30. 30、 Influence of MOS_2 contents on sintering process of Cu-MOS_2 composites
    MoS2含量对Cu-MoS2复合材料烧结过程的影响