ferroelectric memory

ferroelectric memory 基本解释

铁电存储器

计算机

重点词汇

• ferroelectricn. 铁电体 [化] 铁电的; 铁电体; 铁电物质
• memoryn. 记忆, 记忆力, 回忆, 纪念, 存储 n. 内存 [计] 存储器, 内存, 查看内存实用程序

ferroelectric memory 双语例句

1. 1、 In respect of material multifunction, low dimension, com-position, intelligence as well as refinement of raw material and ferroelectric memory, the paper gave a description briefly.
   文中就材料的多功能化、低维、复合、智能化、原材料高纯化及铁电薄膜存储器作了简要的叙述。
2. 2、 SrBi_2Ta_2O_9 films have been found to show a fatigue-free characteristic with simple metal electrodes, and attracted much attention in ferroelectric memory materials. But its annealing temperature is higher and it has lower remanent polarization.
   SrBi2Ta2O9薄膜由于具有优异的抗疲劳特性，成为过去几年引人注目的铁电材料，但是其合成温度相对较高且剩余极化较低。
3. 3、 The design method for ferroelectric memory, which is quite different from that of conventional memories, such as SRAM and DRAM, is described in particular in the paper.
   设计中，采用新开发的铁电电容模型，文中重点介绍了与传统DRAM、SRAM等存储单元完全不同的铁电存储单元的设计方法。
4. 4、 The data storage principle and applications in other relative trades of a new nonvolatile ferroelectric random access memory ( FRAM), which has the characteristic of anti-HEMP ( high electromagnetic pulse) and will not lose information or data when power
   介绍了一种新型非易失性存储器（FRAM）的数据存储原理、特性及其在相关行业的应用。
5. 5、 The Application of FRAM Ferroelectric Non-volatile Memory
   FRAM铁电存储器的应用
6. 6、 Fabrication and Characteristics of Au/ PZT/ p-Si ferroelectric memory Diode
   Au/PZT/p-Si结构铁电存储二极管的制备及其性能
7. 7、 A 4-kbit Serial Ferroelectric Nonvolatile Memory and Its VLSI Implementation
   一种4k位串行铁电不挥发存储器的VLSI实现
8. 8、 I-V Characteristics of ferroelectric memory Diode with Structure of Au/ PZT/ BIT/ p-Si
   Au/PZT/BIT/p-Si结构铁电存储二极管I-V特性
9. 9、 The application of ferroelectric film memory ( FeRAM) to the smart card is present. The comparison between the FeRAM and semiconductor memories is also given.
   描述铁电薄膜存储器在智能卡中应用，并与半导体存储器比较。
10. 10、 The Application of ferroelectric memory in Real-time Process System
    铁电存储器在实时处理系统中的应用
11. 11、 Research on the Ferroelectric Films and Ferroelectric Field Effect Memory
    铁电薄膜和铁电场效应存储器研究
12. 12、 Memory Elements and Theirs Operating Processes of ferroelectric memory
    铁电存储器的基本单元及其工作模式
13. 13、 On volatile ferroelectric memory and related issues
    非易失铁电存储器的进展和若干问题
14. 14、 Implementation of a Ferroelectric Capacitor in Ferroelectric Random Access Memory
    铁电电容模型及其在铁电存储器中的应用
15. 15、 ferroelectric memory and Research on its Fatigue Mechanism
    铁电存储器及其疲劳机制的研究
16. 16、 Application of Ferroelectric Film Memory to the Smart Card
    铁电薄膜存储器在智能卡中的应用
17. 17、 Research of Preparation and Properties of Lower-electrode ( Pt/ Ti) of Ferroelectric Thin Film Memory
    铁电薄膜存储器底电极Pt/Ti的制备及性能研究
18. 18、 Replacing conventional SDRAM with new type ferroelectric memory, this system can get a guarantee on reliability of gathering data and storage.
    用新型的铁电存储器代替传统了SDRAM，使系统对采集数据存储的可靠性得到保障。
19. 19、 With prominent ferroelectric properties such as negligible polarization fatigue, high Curie temperature and low leakage current, bismuth layered structure materials ( BLSF) are proper to apply at high temperature and high frequency conditions and have att
    铋层状结构材料具有优良的铁电性能如抗疲劳特性、较高的居里温度，漏电流小，因而特别适合于高温、高频条件下使用，在铁电存储器领域有广泛的应用前景。
20. 20、 Simulation of Physical Mechanism for I-V Characteristics of Ferroelectric Nonvolatile Memory Field Effect Transistor
    铁电存储场效应晶体管I-V特性的物理机制模拟
21. 21、 Ferroelectric Films and Ferroelectric Random Access Memory
    铁电薄膜及铁电存储器研究
22. 22、 Researchers now put more focus on non-volatile memory device, such as magnetic memory device, ferroelectric memory device, phase-transition memory device, and resistance random access memory.
    目前，研究者们更多的把关注的重点放在了新型非易失性存储器上，例如磁存储器、铁电存储器、相变存储器、电阻存储器。
23. 23、 Among the non-volatile memories, the ferroelectric memory has been considered as the most promising non-volatile memory device due to its attractive properties such as high access speed, low operation voltage and low power consumption.
    其中铁电存储器以其读写速度快、操作电压低、功耗小等优点，成为最具潜力的非挥发性存储器之一。
24. 24、 These results suggest that the sandwich structure BLT/ PZT/ BLT thin film is a promising material combination for ferroelectric memory applications.
    这些结果表明，三明治结构的BLT/PZT/BLT薄膜是一种非常适合应用于铁电存储器的铁电薄膜。
25. 25、 In this thesis, the research is primarily focused on the studies of the fabrication and characteristics of BNT nanostructures for non-volatile ferroelectric memory application.
    本文主要通过实验制备和表征用于制作非挥发性铁电存储器的BNT纳米结构。
26. 26、 In recently years, PZT attracts widely attention again because of its great technique potential in next generation non-volatile memory and it has been well recognized as one of the most important candidates in ferroelectric non-volatile memory technology.
    近年来，得益于非挥发存储器巨大的市场需求和铁电存储器在该领域的技术潜力，PZT再次受到广泛关注，并被视为制造下一代非挥发存储器的重要材料。
27. 27、 Use new generation ferroelectric memory, which has the characteristics of undelayed reading and nonvolatile storing and etc, as the data memory.
    在数据存储器的设计上，采用了新一代铁电存储器，该存储器具有数据读取快和非失性等特征。
28. 28、 ferroelectric memory can store the setting parameters and data measured by the instrument.
    铁电存储器被用来保存仪表所设定的参数和测量数据。
29. 29、 At present, the materials used to prepare ferroelectric thin film memory are mainly PZT series because they have some favorable properties, such as large remnant polarization ( Pr) value and low processing temperature.
    锆钛酸铅（PZT）系铁电材料具有一系列良好的性能，如较大的剩余极化值、较低的热处理温度等，是目前铁电存储器所用的主要材料。
30. 30、 In data storage, the use of ferroelectric memory chip realizes power failure protection and its data can be reliable stored at least 10 years.
    数据存储中，采用铁电存储芯片，实现掉电保护，保证数据至少可靠保存10年以上。