indium antimonide

indium antimonide 基本解释

网络  锑化铟

化学

重点词汇

• indiumn. 铟 [化] 铟In
• antimoniden. [化]锑化物

indium antimonide 双语例句

1. 1、 A indium antimonide IR-photoelectric Sensor Enhanced by Magnetoresistance
   磁阻效应增强型锑化铟红外光电传感器
2. 2、 Recombination processes of carriers in indium antimonide
   锑化铟中载流子的复合过程
3. 3、 Velocity of Motion of a-Dislocations in indium antimonide
   锑化铟单晶中α位错的运动速度
4. 4、 Conductivity Hall effect and transverse magnetoresistance effect of N type indium antimonide
   N型锑化铟的电导率，霍尔效应和横向磁阻效应
5. 5、 Heat treatment of indium antimonide
   锑化铟的热处理
6. 6、 The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
   本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。
7. 7、 The noise of the p-type indium antimonide
   p型锑化铟中的噪声
8. 8、 The mechanical damage of indium antimonide
   乙酰丙酮铟的制备锑化铟的机械损伤
9. 9、 Predicted performance of indium antimonide focal plane arrays
   锑化铟焦平面阵列的性能预测
10. 10、 X-ray measurement of the thermal expansion of germanium, silicon, indium antimonide and gallium arsenide
    锗、硅、锑化铟和砷化镓的热膨涨&用X射线衍射法测量
11. 11、 Effect of chemical etch on the surface of indium antimonide
    化学腐蚀对锑化铟表面的影响
12. 12、 Moreover, its feasibility has been verified by chemical equilibrium calculation. THE MECHANICAL DAMAGE OF indium antimonide
    平衡计算证明了硫化沉淀分离铟、锡的可行性。锑化铟的机械损伤
13. 13、 Finally, this paper also presents a design of gyroelectric PhC structure with indium antimonide ( InSb) dielectric which supports one-way edge mode operating at terahertz frequencies, and the characteristics of terahertz one-way edge mode are carefully an
    最后，本论文设计了一种基于锑化铟（InSb）材料工作在太赫兹波段的支持单向边界模式的旋电光子晶体结构，并分析了这种太赫兹单向边界模的传输特性。
14. 14、 Infrared radiation measuring instrument uses infrared indium antimonide ( InSb) detector to achieve the measurement.
    红外辐照度测量仪采用红外锑化铟（InSb）探测器来实现。