monocrystalline silicon 基本解释
单晶硅
重点词汇
- siliconn. 硅 [化] 硅Si
- monocrystalline[计] 单晶的
monocrystalline silicon 双语例句
- 1、
Processing and manufacturing monocrystalline silicon and V-Ti products projects have been put into operation here.
单晶硅,钒钛制品加工制造项目已在区内落地。 - 2、
monocrystalline silicon Surface Etching Process for HIT Solar Cells
HIT太阳电池的单晶硅表面腐蚀工艺的研究 - 3、
Neutron transmutation doping of monocrystalline silicon
单晶硅中子嬗变掺杂技术 - 4、
Influence of firing process on bow of thin monocrystalline silicon wafers for solar cells
烧结工艺对薄片单晶硅太阳电池弯曲的影响 - 5、
Numerical simulation of ultrafast energy transport in monocrystalline silicon films under femtosecond laser irradiation
飞秒激光辐照下单晶硅薄膜中超快能量输运的数值模拟 - 6、
Scratch Damage Behavior of monocrystalline silicon and Nickel-Titanium Shape Memory Alloy
单晶硅与镍钛形状记忆合金的划痕损伤研究 - 7、
The damaged layer of monocrystalline silicon cut by wire electrical discharge machining ( WEDM) was investigated via cross-section microscopy and preferred etching detection methods.
采用截面显微观察法和择优蚀刻法对电火花线切割单晶硅产生的亚表面损伤层进行检测。 - 8、
Study on Erosion Rate and Cutting Quality of monocrystalline silicon Cut by Micro Abrasive Air Jet
微磨料气射流切割单晶硅冲蚀率及切割质量研究 - 9、
This lamp is the sources of energy with monocrystalline silicon solar energy cell or polycrystalline silicon solar energy cell;
该灯以单晶硅太阳能电池或多晶硅太阳能电池为能源; - 10、
In this paper, molecular dynamics simulation is carried on the nanometer grinding of monocrystalline silicon.
对单晶Si的压痕过程进行了分子动力学模拟。 - 11、
By using the routine chemical corrosion, show the defect of the monocrystalline silicon; find the typical linear deranged.
用常规化学腐蚀法显示出单晶硅中的缺陷,观察典型的位错。 - 12、
However, follows the ongoing maturity of the production process, high efficiency of monocrystalline silicon must be applied widely in the future.
但随着生产工艺的逐渐成熟,单晶硅的高效能定必于日后被广泛使用。 - 13、
The Effect of High-Energy Particles Irradiation in monocrystalline silicon
高能粒子辐照单晶硅辐照效应的研究 - 14、
The Research of Power Quality by Improve the Wafer Efficiency of the monocrystalline silicon Solar Cell
单晶硅太阳能电池硅片转换效率提高对并网电能质量的改善 - 15、
Influence of Al-BSF on Electrical Properties of monocrystalline silicon Solar Cells
铝背场对单晶硅太阳电池输出特性的影响 - 16、
Products in China of China Light Industry Products Quality Assurance Center in2002.In recent yeas, it has developed monocrystalline silicon.
开发了用于飞速发展的电子行业专用材料硅单晶。 - 17、
The basic requirements and progress of detector-grade monocrystalline silicon are also described.
文中也谈到了对探测器级硅单晶的基本要求和今后展望。 - 18、
This paper attempts to review the effect on FZ monocrystalline silicon by annealing.
阐述了热处理对辐照区熔硅单晶的影响。 - 19、
The progress in study of the mechanical properties of monocrystalline silicon have been reviewed.
本文综述了硅材料的机械性能研究进展和相应的研究方法。 - 20、
The results show that the expecting dye has been bound to the surface of monocrystalline silicon.
结果表明,预想结构的染料已键合于单晶硅表面。 - 21、
Research of monocrystalline silicon waveguide basis trough etching technology
如槽、台刻蚀等。单晶硅波导基槽刻蚀工艺的研究 - 22、
The involved reason was that monocrystalline silicon had a higher smooth and uniform surface.
其原因可能是单晶硅表面原子排列非常整齐,具有高度光滑和均匀的表面条件。 - 23、
Free abrasive wire saw technique is the main method for monocrystalline silicon slicing process.
游离磨料线锯切割技术是目前单晶硅切片的主要加工方法。 - 24、
Damage effects of monocrystalline silicon solar cells induced by CW laser at three kinds of wavelength were researched, the damage mechanisms were analyzed.
研究了单晶硅太阳能电池在三种不同波长连续激光辐照下的损伤效应,分析了损伤机理。 - 25、
monocrystalline silicon is the most basic material in electronic information materials.
单晶硅也称硅单晶,是电子信息材料中最基础性材料。 - 26、
With the rapid development of the IC, the increasingly high demand for monocrystalline silicon wafer surface quality and grinding accuracy.
随着IC的快速发展,对单晶硅片的表面质量和加工精度的要求越来越高。 - 27、
Compared with the behaviors of Pt nanoparticles-assisted etching of heavily doped P-type monocrystalline silicon, significant differences can be obtained, which means doping levels can affect the etching properties of P-type monocrystalline silicon.
这与Pt纳米颗粒催化刻蚀重掺杂P型单晶硅的实验结果有很大的差别,表明了掺杂浓度会影响Pt颗粒对P型单晶硅的催化刻蚀特性。 - 28、
It also has been introduced to machining in 1990 's.Through profound research of basic MD theory and method, Debye model is introduced from solid-state physics for conversion between kinetic energy and temperature of the silicon atom, the grinding model o
对分子动力学基本理论和方法进行了深入研究,将固体物理学中的Debye模型引入到单晶硅原子动能和温度之间的转换过程中,建立了适合于单晶硅纳米级磨削过程的分子动力学仿真模型。 - 29、
The method of the preparation plane heterojunction is deposited amorphous silicon thin film on the n type ( 100) monocrystalline silicon substrate through the hot wire chemical vapor deposition ( HWCVD).
平面异质结的制备是在n型(100)单晶硅衬底上,通过热丝化学气相沉积(HWCVD)方法沉积非晶硅薄膜。 - 30、
Based on their excellent physical and mechanical properties, monocrystalline silicon has been widely used in MEMS as typical structural material.
单晶硅基于其优良的物理、机械性能,已经作为典型的结构材料被广泛地应用于微机电系统中。

